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| Datasheet | DMP26M7UFG-13 |
| File Size | 431.92 KB |
| Total Pages | 6 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | DMP26M7UFG-13, DMP26M7UFG-7 |
| Description | MOSFET P-CH 20V 18A PWRDI3333-8, MOSFET P-CH 20V 18A PWRDI3333-8 |
DMP26M7UFG-13 - Diodes Incorporated
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Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 10V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |
Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 18A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 6.7mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 156nC @ 10V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 5940pF @ 10V FET Feature - Power Dissipation (Max) 2.3W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerDI3333-8 Package / Case 8-PowerVDFN |