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| Datasheet | DMT10H025SSS-13 |
| File Size | 471.07 KB |
| Total Pages | 7 |
| Manufacturer | Diodes Incorporated |
| Website | https://www.diodes.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | DMT10H025SSS-13 |
| Description | MOSFETN-CHAN 100V SO-8 |
DMT10H025SSS-13 - Diodes Incorporated
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URL Link
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Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 7.4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 20A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 21.4nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1544pF @ 50V FET Feature - Power Dissipation (Max) 1.4W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |