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DSK10E-ET1 Datasheet

DSK10E-ET1 Cover
DatasheetDSK10E-ET1
File Size28.67 KB
Total Pages3
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 11 part numbers
Associated Parts DSK10E-ET1, DSK10E-BT, DSK10E-AT1, DSK10C-ET1, DSK10C-BT, DSK10C-AT1, DSK10B-BT, DSK10B-AT1, DSK10E, DSK10C, DSK10B
Description DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 400V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL, DIODE GEN PURP 200V 1A AXIAL

DSK10E-ET1 - ON Semiconductor

DSK10E-ET1 Datasheet Page 1
DSK10E-ET1 Datasheet Page 2
DSK10E-ET1 Datasheet Page 3

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URL Link

DSK10E-ET1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10E-BT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10E-AT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10C-ET1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10C-BT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10C-AT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10B-BT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10B-AT1

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

400V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 400V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

200V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 200V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

R-1, Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)

DSK10B

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

100V

Current - Average Rectified (Io)

1A

Voltage - Forward (Vf) (Max) @ If

1.1V @ 1A

Speed

Standard Recovery >500ns, > 200mA (Io)

Reverse Recovery Time (trr)

-

Current - Reverse Leakage @ Vr

10µA @ 100V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

Axial

Supplier Device Package

-

Operating Temperature - Junction

150°C (Max)