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| Datasheet | EPC2051ENGRT |
| File Size | 994.2 KB |
| Total Pages | 6 |
| Manufacturer | EPC |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | EPC2051ENGRT, EPC2051 |
| Description | GANFET TRANS 100V DIE CU PILLAR, GANFET TRANS 100V DIE CU PILLAR |
EPC2051ENGRT - EPC
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Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 5V Vgs(th) (Max) @ Id 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |
Manufacturer EPC Series eGaN® FET Type N-Channel Technology GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 1.7A Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 25mOhm @ 3A, 5V Vgs(th) (Max) @ Id 2.5V @ 1.5mA Gate Charge (Qg) (Max) @ Vgs 2.1nC @ 5V Vgs (Max) +6V, -4V Input Capacitance (Ciss) (Max) @ Vds 258pF @ 50V FET Feature - Power Dissipation (Max) - Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package Die Package / Case Die |