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| Datasheet | FCA47N60-F109 |
| File Size | 3,231.19 KB |
| Total Pages | 8 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FCA47N60-F109, FCA47N60 |
| Description | MOSFET N-CH 600V 47A TO-3P, MOSFET N-CH 600V 47A TO-3P |
FCA47N60-F109 - ON Semiconductor
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Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |
Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 70mOhm @ 23.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V FET Feature - Power Dissipation (Max) 417W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3PN Package / Case TO-3P-3, SC-65-3 |