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FCD7N60TM-WS Datasheet

FCD7N60TM-WS Cover
DatasheetFCD7N60TM-WS
File Size547.23 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FCD7N60TM-WS, FCD7N60TM
Description MOSFET N-CH 600V 7A DPAK, MOSFET N-CH 600V 7A DPAK

FCD7N60TM-WS - ON Semiconductor

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URL Link

FCD7N60TM-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

FCD7N60TM

ON Semiconductor

Manufacturer

ON Semiconductor

Series

SuperFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

600mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

920pF @ 25V

FET Feature

-

Power Dissipation (Max)

83W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63