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| Datasheet | FCH099N65S3_F155 |
| File Size | 442.22 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FCH099N65S3_F155, FCH099N65S3-F155 |
| Description | MOSFET N-CH 650V 30A TO247-3, SF3 650V 99MOHM E TO247L |
FCH099N65S3_F155 - ON Semiconductor
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Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 400V FET Feature - Power Dissipation (Max) 227W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |
Manufacturer ON Semiconductor Series SuperFET® III FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 3mA Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2480pF @ 400V FET Feature - Power Dissipation (Max) 227W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247-3 Package / Case TO-247-3 |