Datasheet | FCPF11N60T |
File Size | 868.18 KB |
Total Pages | 11 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FCPF11N60T, FCPF11N60, FCP11N60 |
Description | MOSFET N-CH 600V 11A TO-220F, MOSFET N-CH 600V 11A TO220F, MOSFET N-CH 600V 11A TO-220 |
FCPF11N60T - ON Semiconductor
The Products You May Be Interested In
FCPF11N60T | ON Semiconductor | MOSFET N-CH 600V 11A TO-220F | 574 More on Order |
|
FCPF11N60 | ON Semiconductor | MOSFET N-CH 600V 11A TO220F | 2186 More on Order |
|
FCP11N60 | ON Semiconductor | MOSFET N-CH 600V 11A TO-220 | 1996 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V FET Feature - Power Dissipation (Max) 36W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series SuperFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1490pF @ 25V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |