Datasheet | FCPF9N60NTYDTU |
File Size | 755.78 KB |
Total Pages | 12 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FCPF9N60NTYDTU, FCP9N60N, FCPF9N60NT |
Description | MOSFET N-CH 600V 9A TO220F, MOSFET N-CH 600V 9A TO220, MOSFET N-CH 600V 9A TO220F |
FCPF9N60NTYDTU - ON Semiconductor
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FCP9N60N | ON Semiconductor | MOSFET N-CH 600V 9A TO220 | 253 More on Order |
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FCPF9N60NT | ON Semiconductor | MOSFET N-CH 600V 9A TO220F | 1840 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series SupreMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V FET Feature - Power Dissipation (Max) 29.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3 (Y-Forming) Package / Case TO-220-3 Full Pack, Formed Leads |
ON Semiconductor Manufacturer ON Semiconductor Series SuperMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V FET Feature - Power Dissipation (Max) 83.3W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
ON Semiconductor Manufacturer ON Semiconductor Series SuperMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 385mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 100V FET Feature - Power Dissipation (Max) 29.8W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |