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FDB0165N807L Datasheet

FDB0165N807L Cover
DatasheetFDB0165N807L
File Size373.34 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDB0165N807L
Description MOSFET N-CH 80V 310A TO263

FDB0165N807L - ON Semiconductor

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FDB0165N807L FDB0165N807L ON Semiconductor MOSFET N-CH 80V 310A TO263 1509

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URL Link

FDB0165N807L

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

80V

Current - Continuous Drain (Id) @ 25°C

310A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.6mOhm @ 36A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

304nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

23660pF @ 40V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 300W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7

Package / Case

TO-263-7, D²Pak (6 Leads + Tab)