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FDB3632-F085 Datasheet

FDB3632-F085 Cover
DatasheetFDB3632-F085
File Size1,731.74 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDB3632-F085
Description MOSFET N-CH 100V 12A D2PAK

FDB3632-F085 - ON Semiconductor

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URL Link

FDB3632-F085

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Automotive, AEC-Q101, PowerTrench®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 80A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6000pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263AB

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB