Datasheet | FDB6670AL |
File Size | 156.2 KB |
Total Pages | 5 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FDB6670AL, FDP6670AL |
Description | MOSFET N-CH 30V 80A D2PAK, MOSFET N-CH 30V 80A TO-220 |
FDB6670AL - ON Semiconductor
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ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2440pF @ 15V FET Feature - Power Dissipation (Max) 68W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263AB Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
ON Semiconductor Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 80A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 40A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2440pF @ 15V FET Feature - Power Dissipation (Max) 68W (Tc) Operating Temperature -65°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |