Datasheet | FDB86360-F085 |
File Size | 911.59 KB |
Total Pages | 6 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | FDB86360-F085 |
Description | MOSFET N-CH 80V 110A TO263 |
FDB86360-F085 - ON Semiconductor
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FDB86360-F085 | ON Semiconductor | MOSFET N-CH 80V 110A TO263 | 454 More on Order |
URL Link
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ON Semiconductor Manufacturer ON Semiconductor Series Automotive, AEC-Q101, PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.8mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 253nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14600pF @ 25V FET Feature - Power Dissipation (Max) 333W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |