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FDC6392S Datasheet

FDC6392S Cover
DatasheetFDC6392S
File Size309.63 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FDC6392S
Description MOSFET P-CH 20V 2.2A SSOT-6

FDC6392S - ON Semiconductor

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FDC6392S FDC6392S ON Semiconductor MOSFET P-CH 20V 2.2A SSOT-6 497

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URL Link

FDC6392S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

PowerTrench®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 2.2A, 4.5V

Vgs(th) (Max) @ Id

1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

5.2nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

369pF @ 10V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

960mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SuperSOT™-6

Package / Case

SOT-23-6 Thin, TSOT-23-6