Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FDD3580 |
| File Size | 119.87 KB |
| Total Pages | 5 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDD3580, FDU3580 |
| Description | MOSFET N-CH 80V 7.7A D-PAK, MOSFET N-CH 80V 7.7A I-PAK |
FDD3580 - ON Semiconductor
The Products You May Be Interested In
URL Link
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-PAK (TO-252AA) Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 7.7A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 29mOhm @ 7.7A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 79nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1760pF @ 40V FET Feature - Power Dissipation (Max) 3.8W (Ta), 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |