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| Datasheet | FDI045N10A |
| File Size | 814.79 KB |
| Total Pages | 12 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FDI045N10A |
| Description | MOSFET N-CH 100V 120A I2PAK-3 |
FDI045N10A - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V FET Feature - Power Dissipation (Max) 263W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |