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FDM21-05QC Datasheet

FDM21-05QC Cover
DatasheetFDM21-05QC
File Size49.98 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts FDM21-05QC, FMD21-05QC
Description MOSFET N-CH 500V 21A I4-PAC-5, MOSFET N-CH 500V 21A I4-PAC-5

FDM21-05QC - IXYS

FDM21-05QC Datasheet Page 1
FDM21-05QC Datasheet Page 2

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URL Link

FDM21-05QC

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5

FMD21-05QC

IXYS

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

21A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

220mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

95nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS i4-PAC™

Package / Case

i4-Pac™-5