Datasheet | FDM21-05QC |
File Size | 49.98 KB |
Total Pages | 2 |
Manufacturer | IXYS |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | FDM21-05QC, FMD21-05QC |
Description | MOSFET N-CH 500V 21A I4-PAC-5, MOSFET N-CH 500V 21A I4-PAC-5 |
FDM21-05QC - IXYS
The Products You May Be Interested In
FDM21-05QC | IXYS | MOSFET N-CH 500V 21A I4-PAC-5 | 254 More on Order |
|
FMD21-05QC | IXYS | MOSFET N-CH 500V 21A I4-PAC-5 | 524 More on Order |
URL Link
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS i4-PAC™ Package / Case i4-Pac™-5 |
IXYS Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 95nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS i4-PAC™ Package / Case i4-Pac™-5 |