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| Datasheet | FDP027N08B |
| File Size | 870.89 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDP027N08B, FDP027N08B-F102 |
| Description | MOSFET N-CH 80V 223A TO-220-3, MOSFET N-CH 80V 120A TO-220-3 |
FDP027N08B - ON Semiconductor
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FDP027N08B | ON Semiconductor | MOSFET N-CH 80V 223A TO-220-3 | 546 More on Order |
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FDP027N08B-F102 | ON Semiconductor | MOSFET N-CH 80V 120A TO-220-3 | 483 More on Order |
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Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V FET Feature - Power Dissipation (Max) 246W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series PowerTrench® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 120A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 178nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 13530pF @ 40V FET Feature - Power Dissipation (Max) 246W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |