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| Datasheet | FDP5500 |
| File Size | 442.34 KB |
| Total Pages | 7 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FDP5500, FDP5500-F085 |
| Description | MOSFET N-CH 55V 80A TO-220AB, MOSFET N-CH 55V 80A TO-220AB |
FDP5500 - ON Semiconductor
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Manufacturer ON Semiconductor Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 269nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3565pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer ON Semiconductor Series Automotive, AEC-Q101, UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 7mOhm @ 80A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 269nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3565pF @ 25V FET Feature - Power Dissipation (Max) 375W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |