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FGA50N100BNTD2 Datasheet

FGA50N100BNTD2 Cover
DatasheetFGA50N100BNTD2
File Size455.63 KB
Total Pages11
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FGA50N100BNTD2
Description IGBT 1000V 50A 156W TO3P

FGA50N100BNTD2 - ON Semiconductor

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URL Link

FGA50N100BNTD2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

NPT and Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

50A

Current - Collector Pulsed (Icm)

200A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power - Max

156W

Switching Energy

-

Input Type

Standard

Gate Charge

257nC

Td (on/off) @ 25°C

34ns/243ns

Test Condition

600V, 60A, 10Ohm, 15V

Reverse Recovery Time (trr)

75ns

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-3P-3, SC-65-3

Supplier Device Package

TO-3P