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FGL60N100BNTDTU Datasheet

FGL60N100BNTDTU Cover
DatasheetFGL60N100BNTDTU
File Size511.48 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FGL60N100BNTDTU, FGL60N100BNTD
Description IGBT 1000V 60A 180W TO264, IGBT 1000V 60A 180W TO264

FGL60N100BNTDTU - ON Semiconductor

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URL Link

FGL60N100BNTDTU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

NPT and Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power - Max

180W

Switching Energy

-

Input Type

Standard

Gate Charge

275nC

Td (on/off) @ 25°C

140ns/630ns

Test Condition

600V, 60A, 51Ohm, 15V

Reverse Recovery Time (trr)

1.2µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3

FGL60N100BNTD

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

IGBT Type

NPT and Trench

Voltage - Collector Emitter Breakdown (Max)

1000V

Current - Collector (Ic) (Max)

60A

Current - Collector Pulsed (Icm)

120A

Vce(on) (Max) @ Vge, Ic

2.9V @ 15V, 60A

Power - Max

180W

Switching Energy

-

Input Type

Standard

Gate Charge

275nC

Td (on/off) @ 25°C

140ns/630ns

Test Condition

600V, 60A, 51Ohm, 15V

Reverse Recovery Time (trr)

1.2µs

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Package / Case

TO-264-3, TO-264AA

Supplier Device Package

TO-264-3