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FJN3307RBU Datasheet

FJN3307RBU Cover
DatasheetFJN3307RBU
File Size37.51 KB
Total Pages4
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts FJN3307RBU, FJN3307RTA
Description TRANS PREBIAS NPN 300MW TO92-3, TRANS PREBIAS NPN 300MW TO92-3

FJN3307RBU - ON Semiconductor

FJN3307RBU Datasheet Page 1
FJN3307RBU Datasheet Page 2
FJN3307RBU Datasheet Page 3
FJN3307RBU Datasheet Page 4

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FJN3307RBU FJN3307RBU ON Semiconductor TRANS PREBIAS NPN 300MW TO92-3 594

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FJN3307RTA FJN3307RTA ON Semiconductor TRANS PREBIAS NPN 300MW TO92-3 590

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URL Link

FJN3307RBU

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA)

Supplier Device Package

TO-92-3

FJN3307RTA

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN - Pre-Biased

Current - Collector (Ic) (Max)

100mA

Voltage - Collector Emitter Breakdown (Max)

50V

Resistor - Base (R1)

22 kOhms

Resistor - Emitter Base (R2)

47 kOhms

DC Current Gain (hFE) (Min) @ Ic, Vce

68 @ 5mA, 5V

Vce Saturation (Max) @ Ib, Ic

300mV @ 500µA, 10mA

Current - Collector Cutoff (Max)

100nA (ICBO)

Frequency - Transition

250MHz

Power - Max

300mW

Mounting Type

Through Hole

Package / Case

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Supplier Device Package

TO-92-3