Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | FJNS3214RTA |
| File Size | 28.13 KB |
| Total Pages | 3 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FJNS3214RTA, FJNS3214RBU |
| Description | TRANS PREBIAS NPN 300MW TO92S, TRANS PREBIAS NPN 300MW TO92S |
FJNS3214RTA - ON Semiconductor
The Products You May Be Interested In
 |
FJNS3214RTA | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92S | 499 More on Order |
 |
FJNS3214RBU | ON Semiconductor | TRANS PREBIAS NPN 300MW TO92S | 271 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |
Manufacturer ON Semiconductor Series - Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter Base (R2) 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA Current - Collector Cutoff (Max) 100nA (ICBO) Frequency - Transition 250MHz Power - Max 300mW Mounting Type Through Hole Package / Case TO-226-3, TO-92-3 Short Body Supplier Device Package TO-92S |