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FQA9N50 Datasheet

FQA9N50 Cover
DatasheetFQA9N50
File Size690.69 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQA9N50
Description MOSFET N-CH 500V 9.6A TO-3P

FQA9N50 - ON Semiconductor

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FQA9N50 FQA9N50 ON Semiconductor MOSFET N-CH 500V 9.6A TO-3P 442

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URL Link

FQA9N50

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

9.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

730mOhm @ 4.8A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1450pF @ 25V

FET Feature

-

Power Dissipation (Max)

160W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3