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| Datasheet | FQB13N10LTM |
| File Size | 566.46 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | FQB13N10LTM |
| Description | MOSFET N-CH 100V 12.8A D2PAK |
FQB13N10LTM - ON Semiconductor
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URL Link
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 180mOhm @ 6.4A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V FET Feature - Power Dissipation (Max) 3.75W (Ta), 65W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |