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| Datasheet | FQB3N30TM |
| File Size | 724.05 KB |
| Total Pages | 9 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | FQB3N30TM, FQI3N30TU |
| Description | MOSFET N-CH 300V 3.2A D2PAK, MOSFET N-CH 300V 3.2A I2PAK |
FQB3N30TM - ON Semiconductor
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Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 55W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 3.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 2.2Ohm @ 1.6A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 230pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 55W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |