![FQB8N60CTM-WS Cover](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0001.jpg)
Datasheet | FQB8N60CTM-WS |
File Size | 754.28 KB |
Total Pages | 9 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FQB8N60CTM-WS, FQI8N60CTU, FQB8N60CTM |
Description | MOSFET N-CH 600V 7.5A, MOSFET N-CH 600V 7.5A I2PAK, MOSFET N-CH 600V 7.5A D2PAK |
FQB8N60CTM-WS - ON Semiconductor
![FQB8N60CTM-WS Datasheet Page 1](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0001.jpg)
![FQB8N60CTM-WS Datasheet Page 2](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0002.jpg)
![FQB8N60CTM-WS Datasheet Page 3](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0003.jpg)
![FQB8N60CTM-WS Datasheet Page 4](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0004.jpg)
![FQB8N60CTM-WS Datasheet Page 5](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0005.jpg)
![FQB8N60CTM-WS Datasheet Page 6](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0006.jpg)
![FQB8N60CTM-WS Datasheet Page 7](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0007.jpg)
![FQB8N60CTM-WS Datasheet Page 8](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0008.jpg)
![FQB8N60CTM-WS Datasheet Page 9](http://media.zouser.com/zouser/datasheet/sm/fqb8n60ctm-ws-0009.jpg)
The Products You May Be Interested In
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FQB8N60CTM-WS | ON Semiconductor | MOSFET N-CH 600V 7.5A | 580 More on Order |
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FQI8N60CTU | ON Semiconductor | MOSFET N-CH 600V 7.5A I2PAK | 285 More on Order |
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FQB8N60CTM | ON Semiconductor | MOSFET N-CH 600V 7.5A D2PAK | 379 More on Order |
URL Link
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 3.13W (Ta), 147W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |