Top

FQPF4N90CT Datasheet

FQPF4N90CT Cover
DatasheetFQPF4N90CT
File Size1,342.69 KB
Total Pages12
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts FQPF4N90CT, FQP4N90C, FQPF4N90C
Description MOSFET N-CH 900V 4A, MOSFET N-CH 900V 4A TO-220, MOSFET N-CH 900V 4A TO-220F

FQPF4N90CT - ON Semiconductor

FQPF4N90CT Datasheet Page 1
FQPF4N90CT Datasheet Page 2
FQPF4N90CT Datasheet Page 3
FQPF4N90CT Datasheet Page 4
FQPF4N90CT Datasheet Page 5
FQPF4N90CT Datasheet Page 6
FQPF4N90CT Datasheet Page 7
FQPF4N90CT Datasheet Page 8
FQPF4N90CT Datasheet Page 9
FQPF4N90CT Datasheet Page 10
FQPF4N90CT Datasheet Page 11
FQPF4N90CT Datasheet Page 12

The Products You May Be Interested In

FQPF4N90CT FQPF4N90CT ON Semiconductor MOSFET N-CH 900V 4A 364

More on Order

FQP4N90C FQP4N90C ON Semiconductor MOSFET N-CH 900V 4A TO-220 1408

More on Order

FQPF4N90C FQPF4N90C ON Semiconductor MOSFET N-CH 900V 4A TO-220F 2361

More on Order

URL Link

FQPF4N90CT

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack

FQP4N90C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220-3

Package / Case

TO-220-3

FQPF4N90C

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

900V

Current - Continuous Drain (Id) @ 25°C

4A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.2Ohm @ 2A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

22nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

960pF @ 25V

FET Feature

-

Power Dissipation (Max)

47W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220F

Package / Case

TO-220-3 Full Pack