Datasheet | FQPF8N60CT |
File Size | 984.78 KB |
Total Pages | 10 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | FQPF8N60CT, FQPF8N60CYDTU, FQPF8N60C |
Description | MOSFET N-CH 600V 7.5A TO-220F, MOSFET N-CH 600V 7.5A TO-220F, MOSFET N-CH 600V 7.5A TO-220F |
FQPF8N60CT - ON Semiconductor
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FQPF8N60CT | ON Semiconductor | MOSFET N-CH 600V 7.5A TO-220F | 334 More on Order |
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FQPF8N60CYDTU | ON Semiconductor | MOSFET N-CH 600V 7.5A TO-220F | 465 More on Order |
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FQPF8N60C | ON Semiconductor | MOSFET N-CH 600V 7.5A TO-220F | 2009 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
ON Semiconductor Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F-3 (Y-Forming) Package / Case TO-220-3 Full Pack, Formed Leads |
ON Semiconductor Manufacturer ON Semiconductor Series QFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.2Ohm @ 3.75A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 36nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1255pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |