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FQT1N80TF-WS Datasheet

FQT1N80TF-WS Cover
DatasheetFQT1N80TF-WS
File Size1,215.48 KB
Total Pages8
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 1 part numbers
Associated Parts FQT1N80TF-WS
Description MOSFET N-CH 800V 0.2A SOT-223

FQT1N80TF-WS - ON Semiconductor

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URL Link

FQT1N80TF-WS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

QFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

200mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

20Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

7.2nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

195pF @ 25V

FET Feature

-

Power Dissipation (Max)

2.1W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-3

Package / Case

TO-261-3