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| Datasheet | GA50JT06-258 |
| File Size | 2,651.93 KB |
| Total Pages | 11 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GA50JT06-258 |
| Description | TRANS SJT 600V 100A |
GA50JT06-258 - GeneSiC Semiconductor
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GA50JT06-258 | GeneSiC Semiconductor | TRANS SJT 600V 100A | 481 More on Order |
URL Link
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Manufacturer GeneSiC Semiconductor Series - FET Type - Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 25mOhm @ 50A Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 769W (Tc) Operating Temperature -55°C ~ 225°C (TJ) Mounting Type Through Hole Supplier Device Package TO-258 Package / Case TO-258-3, TO-258AA |