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| Datasheet | GB01SLT12-252 |
| File Size | 628.57 KB |
| Total Pages | 7 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GB01SLT12-252 |
| Description | DIODE SILICON 1.2KV 1A TO252 |
GB01SLT12-252 - GeneSiC Semiconductor
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GB01SLT12-252 | GeneSiC Semiconductor | DIODE SILICON 1.2KV 1A TO252 | 373 More on Order |
URL Link
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 1.8V @ 1A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 2µA @ 1200V Capacitance @ Vr, F 69pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |