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GB02SHT06-46 Datasheet

GB02SHT06-46 Cover
DatasheetGB02SHT06-46
File Size371.73 KB
Total Pages4
ManufacturerGeneSiC Semiconductor
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts GB02SHT06-46
Description DIODE SCHOTTKY 600V 4A

GB02SHT06-46 - GeneSiC Semiconductor

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GB02SHT06-46 GB02SHT06-46 GeneSiC Semiconductor DIODE SCHOTTKY 600V 4A 495

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GB02SHT06-46

GeneSiC Semiconductor

Manufacturer

GeneSiC Semiconductor

Series

-

Diode Type

Silicon Carbide Schottky

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

4A (DC)

Voltage - Forward (Vf) (Max) @ If

1.6V @ 1A

Speed

No Recovery Time > 500mA (Io)

Reverse Recovery Time (trr)

0ns

Current - Reverse Leakage @ Vr

5µA @ 600V

Capacitance @ Vr, F

76pF @ 1V, 1MHz

Mounting Type

Through Hole

Package / Case

TO-206AB, TO-46-3 Metal Can

Supplier Device Package

TO-46

Operating Temperature - Junction

-55°C ~ 225°C