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| Datasheet | GB10SLT12-252 |
| File Size | 635.54 KB |
| Total Pages | 7 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GB10SLT12-252 |
| Description | DIODE SCHOTTKY 1.2KV 10A TO252 |
GB10SLT12-252 - GeneSiC Semiconductor
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GB10SLT12-252 | GeneSiC Semiconductor | DIODE SCHOTTKY 1.2KV 10A TO252 | 505 More on Order |
URL Link
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 10A Voltage - Forward (Vf) (Max) @ If 2V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 250µA @ 1200V Capacitance @ Vr, F 520pF @ 1V, 1MHz Mounting Type Surface Mount Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package TO-252 Operating Temperature - Junction -55°C ~ 175°C |