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| Datasheet | GC10MPS12-220 |
| File Size | 638.25 KB |
| Total Pages | 7 |
| Manufacturer | GeneSiC Semiconductor |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | GC10MPS12-220 |
| Description | SIC DIODE 1200V 10A TO-220-2 |
GC10MPS12-220 - GeneSiC Semiconductor
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GC10MPS12-220 | GeneSiC Semiconductor | SIC DIODE 1200V 10A TO-220-2 | 999 More on Order |
URL Link
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Manufacturer GeneSiC Semiconductor Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 1200V Current - Average Rectified (Io) 54A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 10A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10µA @ 1200V Capacitance @ Vr, F 660pF @ 1V, 1MHz Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -55°C ~ 175°C |