Datasheet | GP1M009A020PG |
File Size | 521.66 KB |
Total Pages | 6 |
Manufacturer | Global Power Technologies Group |
Website | |
Total Parts | This datasheet covers 2 part numbers |
Associated Parts | GP1M009A020PG, GP1M009A020CG |
Description | MOSFET N-CH 200V 9A IPAK, MOSFET N-CH 200V 9A DPAK |
GP1M009A020PG - Global Power Technologies Group
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Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 400mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 414pF @ 25V FET Feature - Power Dissipation (Max) 52W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |