Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GP1M009A050HS |
| File Size | 408.13 KB |
| Total Pages | 7 |
| Manufacturer | Global Power Technologies Group |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | GP1M009A050HS, GP1M009A050FSH |
| Description | MOSFET N-CH 500V 8.5A TO220, MOSFET N-CH 500V 8.5A TO220F |
GP1M009A050HS - Global Power Technologies Group
The Products You May Be Interested In
 |
GP1M009A050HS | Global Power Technologies Group | MOSFET N-CH 500V 8.5A TO220 | 341 More on Order |
 |
GP1M009A050FSH | Global Power Technologies Group | MOSFET N-CH 500V 8.5A TO220F | 442 More on Order |
URL Link
|
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1195pF @ 25V FET Feature - Power Dissipation (Max) 127W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4.25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1195pF @ 25V FET Feature - Power Dissipation (Max) 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |