Datasheet | GP1M016A060H |
File Size | 391.92 KB |
Total Pages | 7 |
Manufacturer | Global Power Technologies Group |
Website | |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | GP1M016A060H, GP1M016A060F, GP1M016A060FH |
Description | MOSFET N-CH 600V 16A TO220, MOSFET N-CH 600V 16A TO220F, MOSFET N-CH 600V 16A TO220F |
GP1M016A060H - Global Power Technologies Group
The Products You May Be Interested In
GP1M016A060H | Global Power Technologies Group | MOSFET N-CH 600V 16A TO220 | 525 More on Order |
|
GP1M016A060F | Global Power Technologies Group | MOSFET N-CH 600V 16A TO220F | 340 More on Order |
|
GP1M016A060FH | Global Power Technologies Group | MOSFET N-CH 600V 16A TO220F | 475 More on Order |
URL Link
Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 470mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V FET Feature - Power Dissipation (Max) 290W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |
Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 470mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |
Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 470mOhm @ 8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 53nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 3039pF @ 25V FET Feature - Power Dissipation (Max) 48W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220 Package / Case TO-220-3 |