Datasheet | GP2M009A090FG |
File Size | 240.11 KB |
Total Pages | 5 |
Manufacturer | Global Power Technologies Group |
Website | |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | GP2M009A090FG |
Description | MOSFET N-CH 900V 9A TO220F |
GP2M009A090FG - Global Power Technologies Group
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GP2M009A090FG | Global Power Technologies Group | MOSFET N-CH 900V 9A TO220F | 432 More on Order |
URL Link
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Global Power Technologies Group Manufacturer Global Power Technologies Group Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 9A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.4Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 72nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2740pF @ 25V FET Feature - Power Dissipation (Max) 89W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack |