Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | GP30K-E3/73 |
| File Size | 70.21 KB |
| Total Pages | 4 |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | GP30K-E3/73, GP30K-E3/54 |
| Description | DIODE GEN PURP 800V 3A DO201AD, DIODE GEN PURP 800V 3A DO201AD |
GP30K-E3/73 - Vishay Semiconductor Diodes Division
The Products You May Be Interested In
 |
GP30K-E3/73 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | 569 More on Order |
 |
GP30K-E3/54 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 800V 3A DO201AD | 540 More on Order |
URL Link
|
Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.1V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 5µs Current - Reverse Leakage @ Vr 5µA @ 800V Capacitance @ Vr, F 40pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 800V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.1V @ 3A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 5µs Current - Reverse Leakage @ Vr 5µA @ 800V Capacitance @ Vr, F 40pF @ 4V, 1MHz Mounting Type Through Hole Package / Case DO-201AD, Axial Supplier Device Package DO-201AD Operating Temperature - Junction -65°C ~ 175°C |