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HS54095TZ-E Datasheet

HS54095TZ-E Cover
DatasheetHS54095TZ-E
File Size118.06 KB
Total Pages9
ManufacturerRenesas Electronics America
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts HS54095TZ-E
Description MOSFET N-CH 600V 0.2A TO-92

HS54095TZ-E - Renesas Electronics America

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HS54095TZ-E HS54095TZ-E Renesas Electronics America MOSFET N-CH 600V 0.2A TO-92 349

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URL Link

HS54095TZ-E

Renesas Electronics America

Manufacturer

Renesas Electronics America

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16.5Ohm @ 100mA, 10V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

4.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

66pF @ 25V

FET Feature

-

Power Dissipation (Max)

750mW (Ta)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-92-3

Package / Case

TO-226-3, TO-92-3 Short Body