Datasheet | HS8K11TB |
File Size | 3,970.14 KB |
Total Pages | 19 |
Manufacturer | Rohm Semiconductor |
Website | https://www.rohm.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | HS8K11TB |
Description | MOSFET 2N-CH 30V 7A/11A HSML |
HS8K11TB - Rohm Semiconductor
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HS8K11TB | Rohm Semiconductor | MOSFET 2N-CH 30V 7A/11A HSML | 202 More on Order |
URL Link
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Rohm Semiconductor Manufacturer Rohm Semiconductor Series - FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A, 11A Rds On (Max) @ Id, Vgs 17.9mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V Power - Max 2W Operating Temperature 150°C (TJ) Mounting Type Surface Mount Package / Case 8-UDFN Exposed Pad Supplier Device Package HSML3030L10 |