Datasheet | HUF75617D3S |
File Size | 197.57 KB |
Total Pages | 10 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 3 part numbers |
Associated Parts | HUF75617D3S, HUF75617D3, HUF75617D3ST |
Description | MOSFET N-CH 100V 16A DPAK, MOSFET N-CH 100V 16A TO-251AA, MOSFET N-CH 100V 16A DPAK |
HUF75617D3S - ON Semiconductor
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HUF75617D3S | ON Semiconductor | MOSFET N-CH 100V 16A DPAK | 398 More on Order |
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HUF75617D3 | ON Semiconductor | MOSFET N-CH 100V 16A TO-251AA | 205 More on Order |
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HUF75617D3ST | ON Semiconductor | MOSFET N-CH 100V 16A DPAK | 414 More on Order |
URL Link
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V FET Feature - Power Dissipation (Max) 64W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V FET Feature - Power Dissipation (Max) 64W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 16A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 16A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 39nC @ 20V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 570pF @ 25V FET Feature - Power Dissipation (Max) 64W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |