Datasheet | HUF76609D3ST |
File Size | 847.73 KB |
Total Pages | 12 |
Manufacturer | ON Semiconductor |
Website | http://www.onsemi.com/ |
Total Parts | This datasheet covers 1 part numbers |
Associated Parts | HUF76609D3ST |
Description | MOSFET N-CH 100V 10A DPAK |
HUF76609D3ST - ON Semiconductor
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HUF76609D3ST | ON Semiconductor | MOSFET N-CH 100V 10A DPAK | 445 More on Order |
URL Link
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ON Semiconductor Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 425pF @ 25V FET Feature - Power Dissipation (Max) 49W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |