Semiconductors
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| Datasheet | HUF76639S3S |
| File Size | 217.32 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | HUF76639S3S, HUF76639P3 |
| Description | MOSFET N-CH 100V 50A D2PAK, MOSFET N-CH 100V 50A TO-220AB |
HUF76639S3S - ON Semiconductor
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Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 51A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 26mOhm @ 51A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V FET Feature - Power Dissipation (Max) 180W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 51A (Tc) Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs 26mOhm @ 51A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 25V FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |