Top

HUFA75332G3 Datasheet

HUFA75332G3 Cover
DatasheetHUFA75332G3
File Size271.2 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 3 part numbers
Associated Parts HUFA75332G3, HUFA75332S3ST, HUFA75332S3S
Description MOSFET N-CH 55V 60A TO-247, MOSFET N-CH 55V 60A D2PAK, MOSFET N-CH 55V 60A D2PAK

HUFA75332G3 - ON Semiconductor

HUFA75332G3 Datasheet Page 1
HUFA75332G3 Datasheet Page 2
HUFA75332G3 Datasheet Page 3
HUFA75332G3 Datasheet Page 4
HUFA75332G3 Datasheet Page 5
HUFA75332G3 Datasheet Page 6
HUFA75332G3 Datasheet Page 7
HUFA75332G3 Datasheet Page 8
HUFA75332G3 Datasheet Page 9
HUFA75332G3 Datasheet Page 10

The Products You May Be Interested In

HUFA75332G3 HUFA75332G3 ON Semiconductor MOSFET N-CH 55V 60A TO-247 511

More on Order

HUFA75332S3ST HUFA75332S3ST ON Semiconductor MOSFET N-CH 55V 60A D2PAK 410

More on Order

HUFA75332S3S HUFA75332S3S ON Semiconductor MOSFET N-CH 55V 60A D2PAK 378

More on Order

URL Link

HUFA75332G3

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

19mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

145W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247-3

Package / Case

TO-247-3

HUFA75332S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

19mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

145W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

HUFA75332S3S

ON Semiconductor

Manufacturer

ON Semiconductor

Series

UltraFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

19mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

85nC @ 20V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1300pF @ 25V

FET Feature

-

Power Dissipation (Max)

145W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D²PAK (TO-263AB)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB