Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | HUFA76429S3ST |
| File Size | 206.65 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | HUFA76429S3ST, HUFA76429S3S, HUFA76429P3 |
| Description | MOSFET N-CH 60V 47A D2PAK, MOSFET N-CH 60V 47A D2PAK, MOSFET N-CH 60V 47A TO-220AB |
HUFA76429S3ST - ON Semiconductor
The Products You May Be Interested In
 |
HUFA76429S3ST | ON Semiconductor | MOSFET N-CH 60V 47A D2PAK | 305 More on Order |
 |
HUFA76429S3S | ON Semiconductor | MOSFET N-CH 60V 47A D2PAK | 417 More on Order |
 |
HUFA76429P3 | ON Semiconductor | MOSFET N-CH 60V 47A TO-220AB | 190 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 47A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 22mOhm @ 47A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1480pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |