Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | HUFA76443S3ST |
| File Size | 210.57 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | HUFA76443S3ST, HUFA76443S3S, HUFA76443P3 |
| Description | MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A D2PAK, MOSFET N-CH 60V 75A TO-220AB |
HUFA76443S3ST - ON Semiconductor
The Products You May Be Interested In
 |
HUFA76443S3ST | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 652 More on Order |
 |
HUFA76443S3S | ON Semiconductor | MOSFET N-CH 60V 75A D2PAK | 236 More on Order |
 |
HUFA76443P3 | ON Semiconductor | MOSFET N-CH 60V 75A TO-220AB | 203 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 129nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4115pF @ 25V FET Feature - Power Dissipation (Max) 260W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 129nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4115pF @ 25V FET Feature - Power Dissipation (Max) 260W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 8mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 129nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 4115pF @ 25V FET Feature - Power Dissipation (Max) 260W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |