Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | HUFA76629D3ST |
| File Size | 202.76 KB |
| Total Pages | 10 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | HUFA76629D3ST, HUFA76629D3, HUFA76629D3S |
| Description | MOSFET N-CH 100V 20A DPAK, MOSFET N-CH 100V 20A IPAK, MOSFET N-CH 100V 20A DPAK |
HUFA76629D3ST - ON Semiconductor
The Products You May Be Interested In
 |
HUFA76629D3ST | ON Semiconductor | MOSFET N-CH 100V 20A DPAK | 498 More on Order |
 |
HUFA76629D3 | ON Semiconductor | MOSFET N-CH 100V 20A IPAK | 524 More on Order |
 |
HUFA76629D3S | ON Semiconductor | MOSFET N-CH 100V 20A DPAK | 156 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1285pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1285pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I-PAK Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 20A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 52mOhm @ 20A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V Vgs (Max) ±16V Input Capacitance (Ciss) (Max) @ Vds 1285pF @ 25V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-252AA Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |