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| Datasheet | HYB25D512800CE-6 |
| File Size | 2,502.39 KB |
| Total Pages | 42 |
| Manufacturer | Qimonda |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | HYB25D512800CE-6, HYB25D512800CE-5 |
| Description | IC DRAM 512M PARALLEL 66TSOP II, IC DRAM 512M PARALLEL 66TSOP II |
HYB25D512800CE-6 - Qimonda
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HYB25D512800CE-6 | Qimonda | IC DRAM 512M PARALLEL 66TSOP II | 2805 More on Order |
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HYB25D512800CE-5 | Qimonda | IC DRAM 512M PARALLEL 66TSOP II | 2570 More on Order |
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Manufacturer Qimonda Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 512Mb (64M x 8) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.3V ~ 2.7V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package 66-TSOP II |
Manufacturer Qimonda Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 512Mb (64M x 8) Memory Interface Parallel Clock Frequency 200MHz Write Cycle Time - Word, Page - Access Time - Voltage - Supply 2.3V ~ 2.7V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount Package / Case 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package 66-TSOP II |